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Preliminary
RJK03C1DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10
Sep 29, 2009
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) * Pb-free * Halogen-free * * * * *
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5678 DDDD
5 4
4 G
3 12
1, 2, 3 4 5
Source Gate Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg
Note1
Ratings 30 20 60 240 60 28 78.4 65 1.92 150 -55 to +150
Unit V V A A A A mJ W C/W C C
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 1 of 6
RJK03C1DPB
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.7 2.2 120 6000 1230 550 0.5 42 18 16 18 19 75 15 0.39 40 Max -- 0.5 1 2.5 2.2 3.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A mA V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 30 A, VGS = 10 V Note4 ID = 30 A, VGS = 4.5 V Note4 ID = 30 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, VGS = 4.5 V, ID = 60 A VGS = 10 V, ID = 30 A, VDD 10 V, RL = 0.33 , Rg = 4.7 IF = 2 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 2 of 6
RJK03C1DPB
Preliminary
Main Characteristics
Power vs. Temperature Derating
80 1000
Maximum Safe Operation Area
Pch (W)
ID (A)
60
100
Channel Dissipation
1 ms
Drain Current
40
10
PW = 10 ms
DC a er Op
20
1
Operation in this area is limited by RDS(on) Tc = 25C
n tio
0
50
100
150
200
0.1 1 shot Pulse 0.1 1
10
100
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
100 4.5 V 10 V Pulse Test 2.8 V 100
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
60
2.6 V
ID (A) Drain Current
80
80
60
Drain Current
40
2.4 V
40 25C Tc = 75C -25C
20
20
VGS = 2.2 V
0 2 4 6 8 10 0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
10 Pulse Test
Drain to Source Saturation Voltage VDS (on) (mV)
200
Pulse Test 3
150
VGS = 4.5 V 10 V
100
1
50
ID = 20 A
10 A
5A
0.3
0
0.1 20 1 3 10 30 100 300 1000
4
8
12
16
Gate to Source Voltage
VGS (V)
Drain Current
ID
(A)
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 3 of 6
RJK03C1DPB
Static Drain to Source on State Resistance vs. Temperature
10 Pulse Test 10000 3000
Preliminary
Typical Capacitance vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
8
1000 Coss 300 100 30 VGS = 0 f = 1 MHz 10 20 30 Crss
6 ID = 5 A, 10 A, 20 A VGS = 4.5 V 2 10 V 0 -25 0 25 50 5 A, 10 A, 20 A 75 100 125 150
4
10 0
Case Temperature
Tc
(C)
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
Dynamic Input Characteristics
VDS (V)
VGS VDD = 25 V 10 V 16
Reverse Drain Current IDR (A)
ID = 60 A
VGS (V)
50
20
100 Pulse Test 10 V 80 5V
40
Drain to Source Voltage
30 VDS 20
12
Gate to Source Voltage
60
8
40 VGS = 0, -5V
10
VDD = 25 V 10 V 0 40 80 120 160
4
20
0
0 200
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100
80
60
40
20 0 25
50
75
100
125
150
Channel Temperature Tch (C)
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 4 of 6
RJK03C1DPB
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25C 1 D=1 0.3
Preliminary
0.5
0.2
0.1
0.1
0.03
0.05 2 0.0 lse 01 t pu 0. o h 1s
1m 10 m
PDM PW T 100 m 1
D=
PW T
0.01 10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D. U. T
ID
Vin 15 V 0 VDD
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform
90% 10% 10% 10%
90% td(on) tr
90% td(off) tf
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 5 of 6
RJK03C1DPB
Preliminary
Package Dimensions
Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part No. RJK03C1DPB-00-J5 Quantity 2500 pcs Taping Shipping Container
REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 6 of 6
4.2
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Colophon .7.2

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